The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 01, 2022
Filed:
Oct. 26, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yi-Hsiung Lin, Zhudong Township, TW;
Cheng-En Lee, Hsinchu County, TW;
Chia-Lin Ou, Hsinchu, TW;
Hsuan-Pang Liu, Hsinchu, TW;
Yao-Jen Yeh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.