The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Jan. 24, 2020
Applied Materials, Inc., Santa Clara, CA (US);
He Ren, San Jose, CA (US);
Hao Jiang, San Jose, CA (US);
Mehul Naik, San Jose, CA (US);
Wenting Hou, San Jose, CA (US);
Jianxin Lei, Fremont, CA (US);
Chen Gong, Nanjing, CN;
Yong Cao, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of forming an interconnect structure for semiconductor devices is described. The method comprises depositing an etch stop layer on a substrate by physical vapor deposition followed by in situ deposition of a metal layer on the etch stop layer. The in situ deposition comprises flowing a plasma processing gas into the chamber and exciting the plasma processing gas into a plasma to deposit the metal layer on the etch stop layer on the substrate. The substrate is continuously under vacuum and is not exposed to ambient air during the deposition processes.