The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Jan. 17, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chien-Hsun Chen, Zhutian Township, TW;

Shou-Yi Wang, Hsinchu, TW;

Jiun Yi Wu, Zhongli, TW;

Chung-Shi Liu, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/66 (2006.01); H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 25/18 (2006.01);
U.S. Cl.
CPC ...
H01L 24/24 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/66 (2013.01); H01L 24/19 (2013.01); H01L 24/81 (2013.01); H01L 25/18 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2223/6627 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/24225 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/1434 (2013.01);
Abstract

In an embodiment, a device includes: a semiconductor device; and a redistribution structure including: a first dielectric layer; a first grounding feature on the first dielectric layer; a second grounding feature on the first dielectric layer; a first pair of transmission lines on the first dielectric layer, the first pair of transmission lines being laterally disposed between the first grounding feature and the second grounding feature, the first pair of transmission lines being electrically coupled to the semiconductor device; a second dielectric layer on the first grounding feature, the second grounding feature, and the first pair of transmission lines; and a third grounding feature extending laterally along and through the second dielectric layer, the third grounding feature being physically and electrically coupled to the first grounding feature and the second grounding feature, where the first pair of transmission lines extend continuously along a length of the third grounding feature.


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