The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Apr. 25, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Hsiang Chang, Hsin-Chu, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Sheng-Hung Shih, Hsinchu, TW;
Wen-Ting Chu, Kaohsiung, TW;
Tzu-Yu Chen, Kaohsiung, TW;
Fu-Chen Chang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to an integrated chip including one or more lower interconnect layers arranged within one or more stacked inter-layer dielectric layers over a substrate. A bottom electrode is disposed over the one or more interconnect layers, and a top electrode is disposed over the bottom electrode. A ferroelectric layer is disposed between and contacts a first surface of the bottom electrode and a second surface of the top electrode. The ferroelectric layer includes a protrusion that extends past outer surfaces of the top electrode and the bottom electrode along a first direction that is perpendicular to a second direction that is normal to the first surface. The protrusion is confined between lines that extend along the first and second surface.