The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
May. 05, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chien-Hao Hsu, Zhubei, TW;
Wei-Hsiang Tu, Hsinchu, TW;
Kuo-Chin Chang, Chiayi, TW;
Mirng-Ji Lii, Sinpu Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first insulating layer formed over a conductive feature and a capacitor structure embedded in the first insulating layer. The semiconductor device also includes a bonding pad formed over the first insulating layer and corresponding to the capacitor structure. The bonding pad has a top surface and a multi-step edge to form at least three corners. In addition, the semiconductor device structure includes a second insulating layer conformally covering the at least three corners formed by the top surface and the multi-step edge of the bonding pad.