The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Aug. 25, 2019
Micron Technology, Inc., Boise, ID (US);
Yi Hu, Boise, ID (US);
Ramey M. Abdelrahaman, Boise, ID (US);
Narula Bilik, Boise, ID (US);
Daniel Billingsley, Meridian, ID (US);
Zhenyu Bo, Boise, ID (US);
Joan M. Kash, Meridian, ID (US);
Matthew J. King, Boise, ID (US);
Andrew Li, Boise, ID (US);
David Neumeyer, Boise, ID (US);
Wei Yeeng Ng, Boise, ID (US);
Yung K. Pak, Oasis, ID (US);
Chandra Tiwari, Boise, ID (US);
Yiping Wang, Boise, ID (US);
Lance Williamson, Boise, ID (US);
Xiaosong Zhang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.