The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 2021
Filed:
May. 15, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takehiko Orii, Nirasaki, JP;
Yasuo Asada, Nirasaki, JP;
Jun Lin, Nirasaki, JP;
Ayano Hagiwara, Nirasaki, JP;
Shinji Irie, Nirasaki, JP;
Kenji Tanouchi, Nirasaki, JP;
Kakeru Wada, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32135 (2013.01); H01L 21/67069 (2013.01);
Abstract
There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an Fgas and the second fluorine-containing gas including at least a ClFgas, an IFgas, an IFgas or an SFgas.