The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 23, 2021

Filed:

Oct. 25, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tzu-Yu Chen, Kaohsiung, TW;

Kuo-Chi Tu, Hsin-Chu, TW;

Sheng-Hung Shih, Hsinchu, TW;

Wen-Ting Chu, Kaohsiung, TW;

Chih-Hsiang Chang, Hsin-Chu, TW;

Fu-Chen Chang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11502 (2017.01); H01L 27/11507 (2017.01); H01L 49/02 (2006.01); G11C 11/22 (2006.01); H01L 27/11504 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11502 (2013.01); G11C 11/221 (2013.01); H01L 27/11504 (2013.01); H01L 27/11507 (2013.01); H01L 28/55 (2013.01); H01L 28/60 (2013.01);
Abstract

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a plurality of lower interconnect layers disposed within a lower dielectric structure over a substrate. A lower insulating structure is over the lower dielectric structure and has sidewalls extending through the lower insulating structure. A bottom electrode is arranged along the sidewalls and an upper surface of the lower insulating structure. The upper surface of the lower insulating structure extends past outermost sidewalls of the bottom electrode. A data storage structure is disposed on the bottom electrode and is configured to store a data state. A top electrode is disposed on the data storage structure. The bottom electrode has interior sidewalls coupled to a horizontally extending surface to define a recess within an upper surface of the bottom electrode. The horizontally extending surface is below the upper surface of the lower insulating structure.


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