The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

May. 14, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jiun Yi Wu, Zhongli, TW;

Ching-Hua Hsieh, Hsinchu, TW;

Chen-Hua Yu, Hsinchu, TW;

Chung-Shi Liu, Hsinchu, TW;

Shou-Yi Wang, Hsinchu, TW;

Chien-Hsun Chen, Zhutian Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/528 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/48 (2006.01); H01L 21/78 (2006.01); H01L 23/532 (2006.01); H01L 21/60 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/78 (2013.01); H01L 23/481 (2013.01); H01L 23/53295 (2013.01); H01L 24/17 (2013.01); H01L 24/96 (2013.01); H01L 2021/6015 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02373 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/02381 (2013.01); H01L 2224/0401 (2013.01);
Abstract

A method includes forming a device structure, the method including forming a first redistribution structure over and electrically connected to a semiconductor device, forming a molding material surrounding the first redistribution structure and the semiconductor device, forming a second redistribution structure over the molding material and the first redistribution structure, the second redistribution structure electrically connected to the first redistribution structure, attaching an interconnect structure to the second redistribution structure, the interconnect structure including a core substrate, the interconnect structure electrically connected to the second redistribution structure, forming an underfill material on sidewalls of the interconnect structure and between the second redistribution structure and the interconnect structure.


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