The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 09, 2021

Filed:

Jun. 07, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hideomi Hane, Yamanashi, JP;

Kentaro Oshimo, Yamanashi, JP;

Shimon Otsuki, Iwate, JP;

Jun Ogawa, Yamanashi, JP;

Noriaki Fukiage, Yamanashi, JP;

Hiroaki Ikegawa, Yamanashi, JP;

Yasuo Kobayashi, Yamanashi, JP;

Takeshi Oyama, Yamanashi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/32 (2006.01); H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01J 37/32449 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01L 21/022 (2013.01); H01L 21/02252 (2013.01); H01L 21/32136 (2013.01); H01J 2237/334 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/0234 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01);
Abstract

There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.


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