The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 2021
Filed:
Jan. 16, 2020
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Chi-Wen Chang, Yuanlin Township, TW;
Hui Yu Lee, Hsinchu, TW;
Ya Yun Liu, Jhubei, TW;
Jui-Feng Kuan, Zhubei, TW;
Yi-Kan Cheng, Taipei, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 9/455 (2018.01); G06F 30/398 (2020.01); G06F 30/20 (2020.01); G06F 30/39 (2020.01); G06F 119/08 (2020.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G06F 30/20 (2020.01); G06F 30/39 (2020.01); G06F 2119/08 (2020.01);
Abstract
A method of making a semiconductor device includes determining a temperature profile for a first die of a three-dimensional integrated circuit (3DIC), wherein the first die comprises a plurality of sub-regions of the first die based on the determined temperature profile. The method further includes simulating operation of a circuit in a second die of the 3DIC based on the determined temperature profile and a corresponding sub-region of the plurality of sub-regions.