The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Oct. 03, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ji-Feng Ying, Hsinchu, TW;

Jhong-Sheng Wang, Taichung, TW;

Tsann Lin, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/00 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01F 10/32 (2006.01); H01L 27/22 (2006.01); H01L 43/04 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); G11C 11/161 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01L 27/228 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01); H01L 43/04 (2013.01);
Abstract

A magnetic memory including a first spin-orbital-transfer-spin-torque-transfer (SOT-SIT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.


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