The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
Mar. 23, 2020
Applicant:
Micromaterials Llc, Wilmington, DE (US);
Inventors:
Uday Mitra, Cupertino, CA (US);
Regina Freed, Los Altos, CA (US);
Ho-yung David Hwang, Cupertino, CA (US);
Sanjay Natarajan, Portland, OR (US);
Lequn Liu, San Jose, CA (US);
Assignee:
Micromaterials LLC, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 27/10808 (2013.01); H01L 27/10852 (2013.01);
Abstract
Methods of forming and processing semiconductor devices are described. Certain embodiments relate to the formation of self-aligned DRAM capacitors. More particularly, certain embodiments relate to the formation of self-aligned DRAM capacitors utilizing the formation of self-aligned growth pillars. The pillars lead to greater capacitor heights, increase critical dimension uniformity, and self-aligned bottom and top contacts.