The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 2021
Filed:
May. 24, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Huai-jen Tung, Tainan, TW;
Ching-Chung Su, Tainan, TW;
Keng-Ying Liao, Tainan, TW;
Po-Zen Chen, Tainan, TW;
Su-Yu Yeh, Tainan, TW;
S. Y. Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes the formation of a pad structure in an image sensor device using a sacrificial isolation region and a silicon oxide based stack with no intervening nitride etch-stop layers. The image sensor device includes a semiconductor layer comprising a first horizontal surface opposite to a second horizontal surface; a metallization layer formed on the second horizontal surface of the semiconductor layer, where the metallization layer includes a dielectric layer. The image sensor device also includes a pad region traversing through the semiconductor layer from the first horizontal surface to the second horizontal surface. The pad region includes an oxide layer with no intervening nitride layers formed on the dielectric layer of the metallization layer and a pad structure in physical contact with a conductive structure of the metallization layer.