The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Sep. 28, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kenneth Chun Kuen Cheng, Albany, NY (US);

Koichi Motoyama, Clifton Park, NY (US);

Kisik Choi, Watervliet, NY (US);

Cornelius Brown Peethala, Slingerlands, NY (US);

Hosadurga Shobha, Niskayuna, NY (US);

Joe Lee, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53266 (2013.01); H01L 21/0228 (2013.01); H01L 21/02183 (2013.01); H01L 21/76807 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76849 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract

Techniques to enable bottom barrier free interconnects without voids. In one aspect, a method of forming interconnects includes: forming metal lines embedded in a dielectric; depositing a sacrificial dielectric over the metal lines; patterning vias and trenches in the sacrificial dielectric down to the metal lines, with the trenches positioned over the vias; lining the vias and trenches with a barrier layer; depositing a conductor into the vias and trenches over the barrier layer to form the interconnects; forming a selective capping layer on the interconnects; removing the sacrificial dielectric in its entirety; and depositing an interlayer dielectric (ILD) to replace the sacrificial dielectric. An interconnect structure is also provided.


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