The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 2021

Filed:

Jan. 28, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jeng-Shyan Lin, Tainan, TW;

Dun-Nian Yaung, Taipei, TW;

Jen-Cheng Liu, Hsinchu, TW;

Chun-Chieh Chuang, Tainan, TW;

Volume Chien, Sinying, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1463 (2013.01); H01L 21/76229 (2013.01); H01L 21/823878 (2013.01); H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14683 (2013.01); H01L 27/14689 (2013.01); H01L 27/14621 (2013.01);
Abstract

An image sensor includes a substrate having a pixel region and a periphery region. The image sensor further includes a first isolation structure formed in the pixel region; the first isolation structure including a first trench having a first depth. The image sensor further includes a second isolation structure formed in the periphery region; the second isolation structure including a second trench having a second depth greater than the first depth. The pixel region includes only NMOS devices and the periphery region includes both NMOS and PMOS devices.


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