The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Nov. 12, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Yi Lee, Hsinchu, TW;
Ting-Gang Chen, Taipei, TW;
Chieh-Ping Wang, Hsinchu, TW;
Hong-Hsien Ke, Changhua County, TW;
Chia-Hui Lin, Dajia Township, TW;
Tai-Chun Huang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method includes etching a gate structure to form a trench extending into the gate structure, wherein sidewalls of the trench comprise a metal oxide material, applying a sidewall treatment process to the sidewalls of the trench, wherein the metal oxide material has been removed as a result of applying the sidewall treatment process and filling the trench with a first dielectric material to form a dielectric region, wherein the dielectric region is in contact with the sidewall of the gate structure.