The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 28, 2021
Filed:
Jul. 29, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chia-Wei Ho, Kaohsiung, TW;
Chun-Wei Hsu, Hsinchu, TW;
Chi-Hsiang Shen, Tainan, TW;
Chi-Jen Liu, Taipei, TW;
Yi-Sheng Lin, Taichung, TW;
Yang-Chun Cheng, Hsinchu, TW;
William Weilun Hong, Hsinchu, TW;
Liang-Guang Chen, Hsinchu, TW;
Kei-Wei Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device includes a first dielectric layer over a substrate, the first dielectric layer including a first dielectric material extending from a first side of the first dielectric layer distal from the substrate to a second side of the first dielectric layer opposing the first side; a second dielectric layer over the first dielectric layer; a conductive line in the first dielectric layer, the conductive line including a first conductive material, an upper surface of the conductive line being closer to the substrate than an upper surface of the first dielectric layer; a metal cap in the first dielectric layer, the metal cap being over and physically connected to the conductive line, the metal cap including a second conductive material different from the first conductive material; and a via in the second dielectric layer and physically connected to the metal cap, the via including the second conductive material.