The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Nov. 07, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Kai Liu, Hsinchu, TW;

Han-Ping Pu, Taichung, TW;

Ting-Chu Ko, Hsinchu, TW;

Yung-Ping Chiang, Hsinchu County, TW;

Chang-Wen Huang, Hsinchu, TW;

Yu-Sheng Hsieh, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/10 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 24/25 (2013.01); H01L 23/5389 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 25/105 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/2402 (2013.01); H01L 2224/24101 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/25174 (2013.01); H01L 2224/25175 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/92244 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/15311 (2013.01);
Abstract

Provided are a package structure and a method of manufacturing the same. The method includes the following processes. A die is provided. An encapsulant is formed laterally aside the die. A first dielectric layer is formed on the encapsulant and the die. A first redistribution layer is formed to penetrate through the first dielectric layer to connect to the die, the first redistribution layer includes a first via embedded in the first dielectric layer and a first trace on the first dielectric layer and connected to the first via. The first via and the first trace of the first redistribution layer are formed separately.


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