The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Apr. 12, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Hsin-Chang Lee, Zhubei, TW;
Pei-Cheng Hsu, Taipei, TW;
Ping-Hsun Lin, New Taipei, TW;
Ta-Cheng Lien, Cyonglin Township, TW;
Tzu Yi Wang, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/22 (2012.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 1/22 (2013.01); H01L 21/0274 (2013.01);
Abstract
A photo mask for extreme ultra violet (EUV) lithography includes a substrate having a front surface and a back surface opposite to the front surface, a multilayer Mo/Si stack disposed on the front surface of the substrate, a capping layer disposed on the multilayer Mo/Si stack, an absorber layer disposed on the capping layer, and a backside conductive layer disposed on the back surface of the substrate. The backside conductive layer is made of tantalum boride.