The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Jul. 12, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Zhi-Chang Lin, Hsinchu County, TW;

Kai-Chieh Yang, Kaohsiung, TW;

Chia-Wei Su, Taoyuan, TW;

Jia-Ni Yu, New Taipei, TW;

Wei-Hao Wu, Hsinchu, TW;

Chih-Hao Wang, Hsinchu County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/302 (2006.01); H01L 23/532 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/0228 (2013.01); H01L 21/02123 (2013.01); H01L 21/302 (2013.01); H01L 21/762 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 23/5329 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/6681 (2013.01);
Abstract

A semiconductor device includes a substrate, a first fin, a second fin, a dummy fin, a first metal gate, a second metal gate, and an isolation structure. The first, the second and the dummy fins are on the substrate, and the dummy fin is disposed between the first fin and the second fin. The first metal gate and the second metal gate are over the first fin and the second fin, respectively. The isolation structure is on the dummy fin, and the dummy fin and the isolation structure separate the first metal gate and the second metal gate.


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