The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Sep. 30, 2019
Beijing E-town Semiconductor Technology, Co., Ltd, Beijing, CN;
Mattson Technology, Inc., Fremont, CA (US);
Li Diao, Fremont, CA (US);
Robert George Elliston, San Jose, CA (US);
David Gilbert, Pflugerville, TX (US);
Chan-Yun Lee, Fremont, CA (US);
James Paris, McKinney, TX (US);
HaiAu PhanVu, San Jose, CA (US);
Tom Tillery, Phoenix, AZ (US);
Vijay Matthew Vaniapura, Tracy, CA (US);
Beijing E-Town Semiconductor Technology Co., Ltd., Beijing, unknown;
Mattson Technology, Inc., Fremont, CA (US);
Abstract
A method for removing photoresist, an oxidation layer, or both from a semiconductor substrate is disclosed. The method includes placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a non-oxidizing plasma to be used in treating the substrate; generating a first non-oxidizing plasma from a first reactant gas and a first carrier gas in the plasma chamber, wherein the first non-oxidizing plasma comprises from about 10% to about 40% of the first reactant gas, wherein the first reactant gas has a flow rate of from about 100 standard cubic centimeters per minute to about 15,000 standard cubic centimeters per minute, and wherein the first carrier gas has a flow rate of from about 500 standard cubic centimeters per minute to about 20,000 standard cubic centimeters per minute; and treating the substrate by exposing the substrate to the first non-oxidizing plasma in the processing chamber.