The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
May. 06, 2019
Infineon Technologies Ag, Neubiberg, DE;
Ralf Siemieniec, Villach, AT;
Thomas Aichinger, Faak am See, AT;
Thomas Basler, Ottenhofen, DE;
Wolfgang Bergner, Klagenfurt, AT;
Rudolf Elpelt, Erlangen, DE;
Romain Esteve, Munich, DE;
Michael Hell, Erlangen, DE;
Daniel Kueck, Villach, AT;
Caspar Leendertz, Munich, DE;
Dethard Peters, Hoechstadt, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.