The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jun. 13, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Wen-Hsiung Lu, Tainan, TW;
Chang-Jung Hsueh, Taipei, TW;
Chin-Wei Kang, Tainan, TW;
Hui-Min Huang, Taoyuan, TW;
Wei-Hung Lin, Xinfeng Township, Hsinchu County, TW;
Cheng-Jen Lin, Kaohsiung, TW;
Ming-Da Cheng, Taoyuan, TW;
Chien-Chun Wang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure is provided. The method includes forming a seed layer over a substrate and forming a first mask layer over the seed layer. The method also includes forming a first trench and a second trench in the first mask layer and forming a first conductive material in the first trench and the second trench. The method further includes forming a second mask layer in the first trench and over the first conductive material, and forming a second conductive material in the second trench and on the first conductive material. A first conductive connector is formed in the first trench with a first height, a second conductive connector is formed in the second trench with a second height, and the second height is greater than the first height.