The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Nov. 06, 2019
Asml Netherlands B.v., Veldhoven, NL;
Maurits Van Der Schaar, Eindhoven, NL;
Youping Zhang, Dublin, CA (US);
Hendrik Jan Hidde Smilde, Veldhoven, NL;
Anagnostis Tsiatmas, Eindhoven, NL;
Adriaan Johan Van Leest, Eindhoven, NL;
Alok Verma, Eindhoven, NL;
Thomas Theeuwes, Veldhoven, NL;
Hugo Augustinus Joseph Cramer, Eindhoven, NL;
Paul Christiaan Hinnen, Veldhoven, NL;
ASML Netherlands B.V., Veldhoven, NL;
Abstract
A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.