The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Jan. 31, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Tsukasa Hirayama, Kumamoto, JP;
Takao Inada, Kumamoto, JP;
Hironobu Hyakutake, Kumamoto, JP;
Kazuya Koyama, Kumamoto, JP;
Hisashi Kawano, Kumamoto, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/306 (2006.01); B08B 3/08 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); B08B 3/08 (2013.01); H01L 21/0206 (2013.01); H01L 21/30604 (2013.01); H01L 21/30608 (2013.01); H01L 21/32133 (2013.01); H01L 21/32134 (2013.01); H01L 21/67023 (2013.01);
Abstract
An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.