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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11081392 B1

PDFFull Text
Date of Patent:
Aug. 03, 2021

Filed:

Sep. 03, 2019

Dicing method for stacked semiconductor devices

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Tsung-Hsing Lu, Hsinchu County, TW;

Jun He, Hsinchu, TW;

Li-Huan Chu, Hsinchu, TW;

Pei-Haw Tsao, Tai-chung, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Galina G Yushina

Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 21/304 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/3043 (2013.01); H01L 21/76898 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01);
Abstract

A method includes providing first and second wafers; forming a first device layer in a top portion of the first wafer; forming a second device layer in a top portion of the second wafer; forming a first groove in the first device layer; forming a second groove in the second device layer; bonding the first and second wafers together after at least one of the first and second grooves is formed; and dicing the bonded first and second wafers by a cutting process, wherein the cutting process cuts through the first and second grooves.

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