The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 03, 2021

Filed:

May. 30, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chung-Hao Chang, Hsinchu, TW;

Chih-Jen Yu, Hsinchu, TW;

Keh-Wen Chang, Miaoli County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01L 21/31144 (2013.01); H01L 21/321 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 29/42392 (2013.01); H01L 2221/1073 (2013.01);
Abstract

A method of manufacturing a semiconductor device is disclosed. In the method, a metallic layer is formed over a substrate, the metallic layer is surface-treated with an alkaline solution, and a bottom anti-reflective coating (BARC) layer is formed on the surface-treated metallic layer.


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