The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Jun. 29, 2020
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Da-Yuan Lee, Jhubei, TW;
Hung-Chin Chung, Pingzhen, TW;
Hsien-Ming Lee, Changhua, TW;
Kuan-Ting Liu, Hsinchu, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Weng Chang, Hsin-Chu, TW;
Wei-Jen Lo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Abstract
The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.