The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Sep. 20, 2018
Tokyo Electron Limited, Tokyo, JP;
Michael A. Carcasi, Austin, TX (US);
Mark H. Somervell, Austin, TX (US);
Seiji Nagahara, Kanagawa, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A patterning method is provided in which a light-sensitive layer is formed, and a target resolution is defined for a pattern to be formed in a target layer. Based on a reference dose and reference LWR that results from a single patterning exposure at an EUV wavelength, the target resolution and reference dose, the light-sensitive layer is subjected to at least two radiation exposures including an EUV patterning exposure at a dose selected to be less than the reference dose and within 15 mJ/cm-200 mJ/cm, and a flood exposure at a wavelength of 200 nm-420 nm and a dose of 0.5 J/cm-20 J/cm. The light-sensitive layer is then developed to form a mask pattern, which is used to etch the pattern into the target layer with the target resolution and a LWR less than or approximately equal to the reference LWR and ≤5 nm.