The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Feb. 16, 2017
Asml Netherlands B.v., Veldhoven, NL;
Lam Research Corporation, Freemont, CA (US);
Michael Kubis, Meerbusch, NL;
Marinus Jochemsen, Veldhoven, NL;
Richard Stephen Wise, Los Gatos, CA (US);
Nader Shamma, Cupertino, CA (US);
Girish Anant Dixit, San Jose, CA (US);
Liesbeth Reijnen, Vlijmen, NL;
Ekaterina Mikhailovna Viatkina, Eindhoven, NL;
Melisa Luca, Breda, NL;
Johannes Catharinus Hubertus Mulkens, Valkenswaard, NL;
ASML Netherlands B.V., Veldhoven, NL;
LAM Research Corporation, Fremont, CA (US);
Abstract
A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.