The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Jan. 16, 2020
Mattson Technology, Inc., Fremont, CA (US);
Beijing E-town Semiconductor Technology, Co., Ltd, Beijing, CN;
Shanyu Wang, Fremont, CA (US);
Ting Xie, Fremont, CA (US);
Chun Yan, San Jose, CA (US);
Xinliang Lu, Fremont, CA (US);
Hua Chung, Saratoga, CA (US);
Michael X. Yang, Palo Alto, CA (US);
Mattson Technology, Inc., Fremont, CA (US);
Beijing E-Town Semiconductor Technology Co., Ltd., Beijing, CN;
Abstract
Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.