The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 15, 2021

Filed:

May. 01, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Xiaoming Yang, Ballston Lake, NY (US);

Haiting Wang, Clifton Park, NY (US);

Hong Yu, Clifton Park, NY (US);

Jeffrey Chee, Ballston Lake, NY (US);

Guoliang Zhu, Rexford, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 21/033 (2006.01); H01L 21/32 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76816 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/0338 (2013.01); H01L 21/31144 (2013.01); H01L 21/32 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01);
Abstract

Methods of forming interconnects and structures for interconnects. A hardmask layer is patterned to form a plurality of first trenches arranged with a first pattern, and sidewall spacers are formed inside the first trenches on respective sidewalls of the hardmask layer bordering the first trenches. An etch mask is formed over the hardmask layer. The etch mask includes an opening exposing a portion of the hardmask layer between a pair of the sidewall spacers. The portion of the hardmask layer exposed by the opening in the etch mask is removed to define a second trench in the hardmask layer.


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