The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Mar. 03, 2017
Applied Materials, Inc., Santa Clara, CA (US);
Xiaodong Wang, San Jose, CA (US);
Joung Joo Lee, San Jose, CA (US);
Fuhong Zhang, Cupertino, CA (US);
Martin Lee Riker, Milpitas, CA (US);
Keith A. Miller, Mountain View, CA (US);
William Fruchterman, Santa Clara, CA (US);
Rongjun Wang, Dublin, CA (US);
Adolph Miller Allen, Oakland, CA (US);
Shouyin Zhang, Livermore, CA (US);
Xianmin Tang, San Jose, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.