The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 25, 2021

Filed:

Jul. 17, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tuan-Yu Hung, Changhua County, TW;

Ching-Feng Yang, Taipei, TW;

Hung-Jui Kuo, Hsinchu, TW;

Kai-Chiang Wu, Hsinchu, TW;

Ming-Che Ho, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/66 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 21/56 (2006.01); H01Q 1/22 (2006.01); H01Q 9/04 (2006.01); H01Q 9/28 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/56 (2013.01); H01L 21/76816 (2013.01); H01L 21/76871 (2013.01); H01L 23/3107 (2013.01); H01L 23/481 (2013.01); H01L 23/66 (2013.01); H01L 24/09 (2013.01); H01Q 1/2283 (2013.01); H01Q 9/0407 (2013.01); H01Q 9/285 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/02372 (2013.01);
Abstract

A semiconductor package and a manufacturing method are provided. The semiconductor package includes a semiconductor die, a through via structure, a dipole structure and an encapsulant. The through via structure and the dipole structure are disposed aside the semiconductor die, and respectively includes an insulating core and a conductive layer. A front surface and a sidewall of the insulating core are covered by the conductive layer. The semiconductor die, the through via structure and the dipole structure are laterally encapsulated by the encapsulant. Surfaces of capping portions of the conductive layers covering the front surfaces of the insulating cores are substantially coplanar with a front surface of the encapsulant.


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