The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Aug. 25, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Wen-Kuei Liu, Xinpu Township, TW;
Teng-Chun Tsai, Hsinchu, TW;
Kuo-Yin Lin, Jhubei, TW;
Shen-Nan Lee, Jhudong Township, TW;
Yu-Wei Chou, Hsinchu, TW;
Kuo-Cheng Lien, Hsinchu, TW;
Chang-Sheng Lin, Baoshan Township, TW;
Chih-Chang Hung, Hsinchu, TW;
Yung-Cheng Lu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of manufacturing an integrated circuit device is provided. A first feature, which has a first susceptibility to damage by chemical mechanical processing (CMP), is formed at a first height as measured from an upper surface of the substrate. A second feature, which has a second susceptibility to damage by the CMP, is formed at a second height as measured from the upper surface of the substrate and is laterally spaced from the first feature by a recess. The second height is greater than the first height, and the second susceptibility is less than the first susceptibility. A sacrificial coating is formed in the recess over an uppermost surface of the first feature. CMP is performed to remove a first portion of the sacrificial coating and expose an upper surface of the second feature while leaving a second portion of the sacrificial coating in place over the first feature.