The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 04, 2021
Filed:
Jan. 13, 2020
Lam Research Corporation, Fremont, CA (US);
Ye Feng, Portland, OR (US);
Marcus Musselman, Oakland, CA (US);
Andrew D. Bailey, III, Milpitas, CA (US);
Mehmet Derya Tetiker, San Francisco, CA (US);
Saravanapriyan Sriraman, Fremont, CA (US);
Yan Zhang, Fremont, CA (US);
Julien Mailfert, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.