The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2021
Filed:
Feb. 24, 2020
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yali Song, Wuhan, CN;
Jianquan Jia, Wuhan, CN;
Kaikai You, Wuhan, CN;
An Zhang, Wuhan, CN;
XiangNan Zhao, Wuhan, CN;
Ying Cui, Wuhan, CN;
Shan Li, Wuhan, CN;
Kaiwei Li, Wuhan, CN;
Lei Jin, Wuhan, CN;
Xueqing Huang, Wuhan, CN;
Meng Lou, Wuhan, CN;
Jinlong Zhang, Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A memory includes an upper deck and a lower deck. The upper deck includes a first upper dummy word line. The lower deck includes a first lower dummy word line. A method for reducing program disturbance of the memory includes adjusting a first upper bias voltage applied to the first upper dummy word line and/or a first upper threshold voltage of the first upper dummy word line to adjust a first difference between the first upper bias voltage and the first upper threshold voltage; and adjusting a first lower bias voltage applied to the first lower dummy word line and/or a first lower threshold voltage of the first lower dummy word line to adjust a second difference between the first lower bias voltage and the first lower threshold voltage.