The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2021
Filed:
Sep. 25, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Chun-Hao Tseng, Taichung, TW;
Ying-Hao Kuo, Hsinchu, TW;
Kai-Fang Cheng, Taoyuan, TW;
Hai-Ching Chen, Hsinchu, TW;
Tien-I Bao, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An apparatus comprises a substrate having a plateau region and a trench region, a metal layer over the plateau region, a semiconductor component over the trench region, wherein a gap is between the plateau region and the semiconductor component, an adhesion promoter layer over the plateau region, the semiconductor component and the gap, a dielectric layer over the adhesion promoter layer and a bonding interface formed between the adhesion promoter layer and the dielectric layer, wherein the bonding interface comprises a chemical structure comprising a first dielectric material of the adhesion promoter layer and a second dielectric material of the dielectric layer.