The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 2021
Filed:
Aug. 23, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Su-Hao Liu, Jhongpu Township, TW;
Wen-Yen Chen, Hsicnchu, TW;
Tz-Shian Chen, Hsinchu, TW;
Cheng-Jung Sung, Tainan, TW;
Li-Ting Wang, Hsinchu, TW;
Liang-Yin Chen, Hsinchu, TW;
Huicheng Chang, Tainan, TW;
Yee-Chia Yeo, Hsinchu, TW;
Syun-Ming Jang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A method includes forming a gate stack over a first semiconductor region, removing a second portion of the first semiconductor region on a side of the gate stack to form a recess, growing a second semiconductor region starting from the recess, implanting the second semiconductor region with an impurity, and performing a melting laser anneal on the second semiconductor region. A first portion of the second semiconductor region is molten during the melting laser anneal, and a second and a third portion of the second semiconductor region on opposite sides of the first portion are un-molten.