The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Jun. 08, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ya-Ping Su, Hsin-Chu, TW;
Han-Wen Fung, Hsin-Chu, TW;
Chia-Chi Chung, Hsinchu, TW;
Chih-Hsien Hsu, Hsinchu, TW;
Chun Yan Chen, Zhubei, TW;
Chien-Sheng Wu, Hsin-Chu, TW;
Tien-Chih Huang, Hsin-Chu, TW;
Wei-Da Chen, Hsin-Chu, TW;
Chien-Hua Tseng, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.