The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2021
Filed:
Jul. 16, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Wei-Chun Yen, Hsinchu County, TW;
Chi Yang, Taichung, TW;
Shang-Chieh Chien, New Taipei, TW;
Li-Jui Chen, Hsinchu, TW;
Po-Chung Cheng, Chiayi County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/54 (2006.01); G03F 7/20 (2006.01); H05G 2/00 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); G03F 7/7055 (2013.01); H05G 2/003 (2013.01); H05G 2/008 (2013.01); H01L 21/0274 (2013.01);
Abstract
A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.