The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Feb. 14, 2018
Nippon Steel Chemical & Material Co., Ltd., Tokyo, JP;
Nippon Micrometal Corporation, Saitama, JP;
Tetsuya Oyamada, Tokyo, JP;
Tomohiro Uno, Tokyo, JP;
Takashi Yamada, Saitama, JP;
Daizo Oda, Saitama, JP;
Motoki Eto, Saitama, JP;
NIPPON STEEL CHEMICAL & MATERIAL CO., LTD., Tokyo, JP;
NIPPON MICROMETAL CORPORATION, Saitama, JP;
Abstract
The present invention provides a bonding wire for a semiconductor device suitable for cutting-edge high-density LSIs and on-vehicle LSIs by improving the formation rate of Cu—Al IMC in ball bonds. A bonding wire for a semiconductor device contains Pt of 0.1 mass % to 1.3 mass %, at least one dopant selected from a first dopant group consisting of In, Ga, and Ge, for a total of 0.05 mass % to 1.25 mass %, and a balance being made up of Cu and incidental impurities.