The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Jan. 21, 2019
Tokyo Electron Limited, Tokyo, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
Embodiments are disclosed for a method to process microelectronic workpieces including forming a metal hard mask layer including ruthenium (Ru MHM layer) over one or more underlying layers on a substrate for a microelectronic workpiece, etching the Ru MHM layer to provide a patterned Ru MHM layer, and etching the one or more underlying layers using the patterned Ru MHM layer as a mask to protect portion of the one or more underlying layers. For one embodiment, the Ru MHM layer is a material including 95 percent or more of ruthenium (Ru). For another embodiment, the Ru MHM layer is a material including 70 percent or more of ruthenium (Ru). Further, the Ru MHM layer preferably has a selectivity of 10 or greater with respect to a next underlying layer adjacent to the Ru MHM layer, such as a SiN hard mask layer.