The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 16, 2021

Filed:

Aug. 30, 2019
Applicants:

Mattson Technology, Inc., Fremont, CA (US);

Beijing E-town Semiconductor Technology Co., Ltd., Beijing, CN;

Inventors:

Ting Xie, Fremont, CA (US);

Hua Chung, Saratoga, CA (US);

Xinliang Lu, Fremont, CA (US);

Shawming Ma, Sunnyvale, CA (US);

Michael X. Yang, Palo Alto, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01); C23C 8/24 (2006.01); C23C 8/36 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02247 (2013.01); C23C 8/24 (2013.01); C23C 8/36 (2013.01); H01J 37/321 (2013.01); H01J 37/32091 (2013.01); H01J 37/32541 (2013.01); H01J 37/32651 (2013.01); H01J 37/32715 (2013.01); H01L 21/0217 (2013.01); H01J 2237/332 (2013.01); H01L 21/02252 (2013.01);
Abstract

Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.


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