The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2021
Filed:
Mar. 03, 2020
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Huimei Zhou, Albany, NY (US);
Gen Tsutsui, Glenmont, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Andrew M. Greene, Albany, NY (US);
Dechao Guo, Niskayuna, NY (US);
Huiming Bu, Glenmont, NY (US);
Reinaldo Vega, Yorktown Heights, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76202 (2013.01); H01L 21/02164 (2013.01); H01L 21/02236 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/30604 (2013.01); H01L 21/32 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7849 (2013.01);
Abstract
Integrated chips include a semiconductor fin that has a first active region and a second active region that are electrically separated by an oxide region that completely penetrates the semiconductor fin. A first semiconductor device is formed on the first active region. A second semiconductor device formed on the second active region.