The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
May. 20, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Timothy Tianshyun Yang, Miyagi, JP;
Shinya Morikita, Miyagi, JP;
Kiyohito Ito, Miyagi, JP;
Michiko Nakaya, Miyagi, JP;
Masanobu Honda, Miyagi, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/02164 (2013.01); H01L 21/31138 (2013.01); H01L 21/31144 (2013.01);
Abstract
An etching shape can be suppressed from having non-uniform pattern. A substrate processing method includes burying an organic film in a recess surrounded by a silicon-containing film formed on a sidewall of a pattern of photoresist on a target film; and etching or sputtering the organic film and the silicon-containing film under a condition in which a selectivity thereof is about 1:1.