The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2020
Filed:
Nov. 21, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Ming-Han Lee, Taipei, TW;
Shih-Kang Fu, Taoyuan County, TW;
Meng-Pei Lu, Hsinchu, TW;
Shau-Lin Shue, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76864 (2013.01); H01L 21/3212 (2013.01); H01L 21/76843 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01);
Abstract
A method includes forming a first metal into a first trench in a dielectric layer, performing a thermal treatment to the first metal such that an average grain size of the first metal is increased, and performing a first chemical mechanical polish (CMP) process to the first metal after the performing the thermal treatment.