The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Sep. 28, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Brian S. Doyle, Portland, OR (US);

Prashant Majhi, San Jose, CA (US);

Kaan Oguz, Beaverton, OR (US);

Kevin P. O'Brien, Portland, OR (US);

Abhishek A. Sharma, Hillsboro, OR (US);

David L. Kencke, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 45/00 (2006.01); H01L 43/02 (2006.01); H01L 43/10 (2006.01); H01L 43/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01);
Abstract

Spin transfer torque memory (STTM) devices incorporating an Insulator-Metal-Transition (IMT) device or at least one layer of Insulator-Metal-Transition (IMT) material are disclosed. The Insulator-Metal-Transition (IMT) device or at least one layer of Insulator-Metal-Transition (IMT) material are utilized for providing a spike current when the voltage across it exceeds the threshold voltage to reduce a critical current required for transfer torque induced magnetization switching.


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