The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2020

Filed:

Sep. 25, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ssu-Yu Chen, New Taipei, TW;

Che-Chang Hsu, Taichung, TW;

Chi Yang, Taichung, TW;

Shang-Chieh Chien, New Taipei, TW;

Li-Jui Chen, Hsinchu, TW;

Po-Chung Cheng, Chiayi County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H05G 2/00 (2006.01); G03F 1/22 (2012.01); G03F 7/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70033 (2013.01); G03F 1/22 (2013.01); G03F 7/0027 (2013.01); G03F 7/2002 (2013.01); H05G 2/006 (2013.01);
Abstract

A source for generating extreme ultraviolet (EUV) radiation includes a chamber enclosing a low pressure environment. A gas inlet is configured to provide a cleaning gas in the chamber. A plurality of exhaust ports, each having a corresponding gate valve including a scanner gate valve corresponding to an exhaust port separating the chamber from an EUV scanner are provided to the chamber. A pressure sensor is disposed inside the chamber and adjacent to the scanner gate valve. A controller is configured to control the gate valves other than the scanner gate valve based on an output of the pressure sensor.


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